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MP35005/W-MP3510/W
Vishay Lite-On Power Semiconductor
35A Bridge Rectifier
Features
D D D D D D
Diffused junction Low reverse leakage current Surge overload rating to 400A peak Low power loss, high efficiency Case to terminal isolation voltage 2500V UL Listed under recognized component index, file number E95060
MP - W
14 454
MP
Absolute Maximum Ratings
Tj = 25_C Parameter Repetitive peak reverse voltage g =Working peak reverse voltage =DC Bl ki voltage DC Blocking lt Test Conditions Type MP35005/W MP3501/W MP3502/W MP3505/W MP3506/W MP3508/W MP3510/W Symbol VRRM =VRWM =VR V Value 50 100 200 400 600 800 1000 400 35 -65...+125 Unit V V V V V V V A A C
Peak forward surge current Average forward current TC=55C Junction and storage temperature range
IFSM IFAV Tj=Tstg
Electrical Characteristics
Tj = 25_C Parameter Forward voltage Reverse current I2t Rating for fusing Diode capacitance Thermal resistance junction to case Test Conditions 17.5A DC TC=25C TC=100C VR=4V, f=1MHz mounted on heatsink Type Symbol Min VF IR IR I2t CD RthJC Typ Max 1.1 10 0.5 664 Unit V
mA
mA A2s pF K/W
400 3.8
Rev. A2, 24-Jun-98
1 (4)
MP35005/W-MP3510/W
Vishay Lite-On Power Semiconductor Characteristics (Tj = 25_C unless otherwise specified)
IFSM - Peak Forward Surge Current ( A ) 50 IFAV - Average Forward Current ( A ) 400
Tj = 50C Single Half Sine-Wave (JEDEC Method)
40 30
300
200
20
10 0
Resistive or inductive load
100
0 1.0 10 Number of Cycles at 60 Hz 100
25
15733
50
75
100
125
150
15735
Tamb - Ambient Temperature ( C )
Figure 1. Max. Average Forward Current vs. Ambient Temperature
1000
Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles
10 IR - Reverse Current ( m A )
IF - Forward Current ( A )
100
1.0
Tj = 25C
10
0.1
Tj = 25C
1.0 0.2
15734
0.01 0
15736
0.6 1.0 1.4 1.8 VF - Forward Voltage ( V )
40
80
120
Percent of Rated Peak Reverse Voltage (%)
Figure 2. Typ. Forward Current vs. Forward Voltage
Figure 4. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage
2 (4)
Rev. A2, 24-Jun-98
MP35005/W-MP3510/W
Vishay Lite-On Power Semiconductor Dimensions in mm
14480
Case: molded plastic with heatsink internally mounted in the bridge encapsulation Terminals: plated leads solderable per MIL-STD-202, method 208 Polarity: symbols marked on case Approx. weight: MP 24 grams, MP-W 21 grams Mounting: through hole for #10 screw Mounting torque: 8.0 in-lbs maximum Mounting position: any Marking: type number
Rev. A2, 24-Jun-98
3 (4)
MP35005/W-MP3510/W
Vishay Lite-On Power Semiconductor Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
4 (4)
Rev. A2, 24-Jun-98

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